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| Composite Transistors UP0411x Series Silicon PNP epitaxial planar type For switching/digital circuits Features * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.000.05 1.600.05 (0.30) 6 5 4 1.200.05 1.600.05 0.20+0.05 -0.02 Unit: mm 0.100.02 5 (0.20) Display at No.1 lead 0.550.05 Resistance by Part Number * UP04111 * UP04113 * UP04116 Marking Symbol (R1) 9U 10 k 6S 47 k 6U 4.7 k (R2) 10 k 47 k 5 (0.20) 0.10 max. Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 125 125 -55 to +125 Unit V V mA mW C C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Internal Connection 6 Tr1 R1 5 R2 4 R2 R1 Tr2 3 1 2 Publication date: December 2003 SJJ00001BED 1 UP0411x Series Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current UP04111 (Collector open) UP04113 UP04116 Forward current transfer ratio UP04111 UP04113 UP04116 Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UP04113 Input resistance UP04111 UP04113 UP04116 Resistance ratio UP04111 UP04113 Transition frequency fT VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz R1 / R 2 0.8 R1 VCE(sat) VOH VOL IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k -30% 10 47 4.7 1.0 1.2 +30% k -4.9 - 0.2 hFE VCE = -10 V, IC = -5 mA 35 80 160 460 - 0.25 V V V Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min -50 -50 - 0.1 - 0.5 - 0.5 - 0.1 - 0.01 Typ Max Unit V V A A mA Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2 SJJ00001BED UP0411x Series Common characteristics chart PT Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UP04111 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -10 Ta = 25C -120 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -80 - 0.6 mA - 0.5 mA - 0.4 mA -40 - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 VCE(sat) IC IC / IB = 10 hFE IC VCE = -10 V Ta = 75C 120 Collector current IC (mA) -1 25C Forward current transfer ratio hFE 25C 80 -25C Ta = 75C -25C -10-1 -10-2 40 -10-3 -1 -10 -100 -1 000 0 - 0.1 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25C -104 VO = -5 V Ta = 25C IO VIN -100 VIN IO VO = - 0.2 V Ta = 25C Output current IO (A) Input voltage VIN (V) 100 -103 -10 10 -102 -1 1 -10 - 0.1 0.1 0 - 10 -20 -30 -1 - 1.0 - 1.2 - 1.4 -1.6 -1.8 -2.0 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00001BED 3 UP0411x Series Characteristics charts of UP04113 IC VCE Collector-emitter saturation voltage VCE(sat) (V) Ta = 25C -120 -10 VCE(sat) IC IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA VCE = -10 V hFE IC 250 Ta = 75C VCE = -10 V Forward current transfer ratio hFE 200 25C -25C Collector current IC (mA) -1 -80 150 -40 - 0.1 Ta = 75C 25C -25C 100 - 0.2 mA - 0.1 mA 50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C Output current IO (A) Input voltage VIN (V) -1.2 -1.4 -1.6 -1.8 -2.0 -103 -10 1 -102 -1 0.1 0 -10 -20 -30 -10 -1.0 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00001BED UP0411x Series Characteristics charts of UP04116 IC VCE Ta = 25C -160 - 0.9 mA - 0.8 mA - 0.7 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC VCE = -10 V 300 Ta = 75C 25C 200 -25C IB = -1.0 mA Collector current IC (mA) - 0.6 mA - 0.5 mA - 0.4 mA -10 -120 -80 - 0.3 mA - 0.2 mA -1 Ta = 75C - 0.1 25C -25C Forward current transfer ratio hFE 100 -40 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25C -100 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C Output current IO (mA) 100 10 -10 Input voltage VIN (V) - 0.8 - 1.2 -1.6 -2.0 -2.4 -10 -1 1 - 0.1 0.1 0 - 10 -20 -30 -1 - 0.4 - 0.01 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00001BED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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